Optical band-gap and associated Urbach energy tails in defected AlN thin films grown by ion beam sputter deposition: Effect of assisted ion energy
نویسندگان
چکیده
AIN thin films were grown by ion beam sputter deposition in reactive assistance of N+/N2+ ions on Si (100) substrates. During deposition, assisted energy (EA) was varied as 90 eV and 120 with a post exposure to N2 plasma. The resultant characterized grazing incidence x-ray diffraction (GIXRD) for their structure atomic force microscopy (AFM) root mean square (rms) surface roughness (δ). UV-VIS spectrophotometry carried out explore optical band-gap associated Urbach (EU) weak absorption tail (EWAT) energies. Our results show that, AlN film possesses larger band gap (Eg) 5.3 comparatively narrower tails when compared those samples which assistance. These band-gaps are further correlated corresponding can be used measure disorder microstructure the film. Also, appropriate optimization substantiates possibility engineering per requirement different devices. Copyright © 2017 VBRI Press.
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ژورنال
عنوان ژورنال: Advanced materials proceedings
سال: 2021
ISSN: ['2002-441X', '2002-4428']
DOI: https://doi.org/10.5185/amp.2017/511